This exciting new resource describes a unified approach to non-linear analysis and design involving compound semiconductor field effect transistors FETs and heterojunction field effect transistors HFETs. It provides an understanding of the characterization and analysis devices made by non-linear design, highlighting the relationship between design and performance. The rarely acknowledged errors inherent in extracting capacitive and conductance elements, as required by all circuit models, from measurements made at the terminals of a device is given, and how these limitations and restrictions often yield workable results is